View MBRA1H100T3G_4636827.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MBRA1H100T3G Surface Mount Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Features http://onsemi.com
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 100 VOLTS
1 Cathode 2 Anode
* * * * * *
Small Compact Surface Mountable Package with J-Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Low Forward Voltage Drop Guardring for Stress Protection This is a Pb-Free Device
MARKING DIAGRAMS
1 SMA CASE 403D PLASTIC A110 AYWWG
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 70 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead and Mounting Surface Temperature for Soldering Purposes: * * * *
260C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Device Meets MSL 1 Requirements Leads are Readily Solderable
2 A110 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
Device MBRA1H100T3G Package SMA (Pb-Free) Shipping 5000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
May, 2009 - Rev. 1
1
Publication Order Number: MBRA1H100/D
MBRA1H100T3G
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 167C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol VRRM VRWM VR IO IFSM Tstg, TJ Value 100 Unit V
1.0 50 -65 to +175
A A C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Thermal Resistance, Junction-to-Ambient (Note 3) Symbol YJCL RqJA RqJA Value 14 75 280 Unit C/W C/W C/W
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25C) (IF = 2.0 A, TJ = 25C) (IF = 1.0 A, TJ = 125C) (IF = 2.0 A, TJ = 125C) Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 6 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%. Symbol VF Value 0.76 0.84 0.61 0.68 40 0.5 Unit V
IR
mA mA
http://onsemi.com
2
MBRA1H100T3G
TYPICAL CHARACTERISTICS
100 IF, FORWARD CURRENT (A) 150C 125C 25C 10 IF, FORWARD CURRENT (A) 100 150C 125C 10 25C
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10 IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 1 0.1 0.01 0.001 0.0001 25C 150C
10 1 0.1 0.01 25C 0.001 150C
125C
125C
0.0001
0.00001
0
10
20
30
40
50
60
70
80
90
100
0.00001
0
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
dc 1.5 Square Wave 1.0
RqJL = 14C/W
PFO, AVERAGE POWER DISSIPATION (W)
2.0
1.0 TJ = 175C 0.8 dc 0.6 0.4 0.2 0 Square Wave
0.5
0 135
140
145
150
155
160
165
170
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
MBRA1H100T3G
TYPICAL CHARACTERISTICS
140 120 C, CAPACITANCE (pF) 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 TJ = 25C
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000 50% (DUTY CYCLE) 100 R(t) (C/W) 20% 10% 5.0% 2.0% 1.0%
10
1.0
0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000
Figure 8. Thermal Response, Junction-to-Ambient (6 mm2 pad)
100 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000
10 R(t) (C/W)
Figure 9. Thermal Response, Junction-to-Ambient (1 in2 pad)
http://onsemi.com
4
MBRA1H100T3G
PACKAGE DIMENSIONS
SMA CASE 403D-02 ISSUE C
HE E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. DIM A A1 b c D E HE L MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.16 2.41 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.060
b
D
POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES)
A A1
L
c
SOLDERING FOOTPRINT*
4.0 0.157
2.0 0.0787
2.0 0.0787
SCALE 8:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
5
MBRA1H100T3/D

▲Up To Search▲

Price & Availability of MBRA1H100T3G

	To Download MBRA1H100T3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .